Organic electro-optic modulator using transparent conducting oxides as electrodes.

A novel organic electro-optic (EO) modulator using transparent conducting oxides (ZnO and In2O3) as electrodes is demonstrated for the first time. The modulator employs the poled guest-host chromophore/polymer material AJL8/APC having r33=35pm/V and is able to achieve a low Vpi=2.8 V switching voltage for an 8mm-long device at a wavelength of 1.31ìm. This corresponds to a Vpi=1.1 V switching voltage for a 1cm-long device in a push-pull configuration. The push-pull VpiL figure of merit normalized for the EO coefficient is thus 1.1V-cm/(35pm/V), which is 3-4x lower than that can be achieved with a convetional modulator structure. The bottom electrode is ZnO grown by Metal-Organic Vapor Deposition (MOCVD) and top electrode In2O3 deposited using ionbeam assisted deposition. The top electrode is directly deposited on the guest-host organic material. The design and fabrication considerations for the modulator are also discussed.